The PLD 2000 and PLD 3000 systems provide uniform single and multilayer films deposited by PLD over substrates up to 3 inches in diameter. These systems include complete software packages and can be used to grow combinatorial thin films as well.
The PLD 2000 and PLD 3000 differ only in terms of their substrates and targets. The PLD 2000 can deposit uniform films on substrates up to 2 inches in diameter with four targets each up to 3 inches in diameter. Meanwhile, the PLD 3000 can deposit films on substrates up to 3 inches with three 4-inch diameter targets. These systems are designed to produce uniform films over the full substrate.
Yttrium oxide films deposited by pulsed laser deposition on 3-inch silicon wafers. Film thickness uniformity for all three wafers is ±1%.
Inside the PLD 2000 deposition chamber, showing black-body heater and target manipulator. The PLD 2000 and PLD 3000 systems share the same chamber size.
The PLD 3000 system is designed to handle a single 3-inch or 2-inch diameter substrate or multiple small samples. The PLD 2000 system is designed to handle a single 2-inch diameter substrate or multiple small samples. Custom substrate holders are available on request.
5 x 10-7 Torr base to 300 mTorr
Variable from 3.5 to 5 inches (90–127 mm) (affects maximum temperature, thickness and composition specifications)
P < 5 x 10-7 Torr guaranteed with system at room temperature and no targets
950°C (in oxygen) for non-transparent substrates and 850°C for transparent substrates such as LaAlO3. No thermal paste or bonding required. NOTE: These are actual substrate temperatures, not heating element temperature or susceptor temperature.
Three 4-inch diameter targets (maximum diameter)
Box-style chamber with easy substrate and target changes. The chamber is compatible with single or multiple magnetron sources as well as ion beam sources.
±3°C across 3-inch diameter substrate for the PLD 3000 system
±4% over 90% of a 3-inch diameter substrate
Of the laser beam on target: 60°
248 nm (KrF) or 193 nm (ArF).