PLD 8000

System Specifications

Maximum substrate size

One 8 inch (200 mm) or one 6 inch (150 mm) diameter substrate. Also can hold either nine 2 inch (50 mm) diameter substrates or four 3 inch (75 mm) diameter substrates. Custom substrate configurations are available on request.

Maximum substrate temperature

800°C (in oxygen) for non-transparent substrates such as Silicon, and 750°C for transparent substrates (such as sapphire). No thermal paste or bonding required.

Temperature uniformity

± 7°C across 8 inch diameter substrate

Operating Pressure Range

5 x 10^-7 Torr base to 100 mTorr

Target Size

Three 12-inch diameter targets (maximum diameter)

Film Thickness Uniformity

± 5 % over 90% of 8” diameter substrate (using an 9 inch throw)

Film Compositional Uniformity

± 2.5 atomic percent over an 8-inch substrate for most materials such as YBCO using a 12-inch diameter target and programmable laser beam rastering, and 9 inch throw. (Uniformity of materials with high vapor pressures such as Lithium or lead may vary significantly depending on deposition parameters)

Target to Substrate (Throw) Distance

System designed for 9-inch (~230 mm) throw. Throw is variable from 7.5 inches (minimum) to 9 inches maximium (effects maximum temperature, thickness and composition specifications)

Raster path length

10.75 inches

Nominal Angle of Incidence

of the laser beam on target: 60°

Base Pressure of the Main Chamber

P < 5 x 10^-7 Torr guaranteed, with system at room temperature without targets.

Vacuum Chamber

Box style chamber with easy substrate / target changes.

Operational Wavelength

248 nm (KrF). Other wavelengths available on request.

Please contact us for site prep information.