PLD 12000
Photo of the insides of a PLD 12000 system with low
temperature heater and four 4-inch targets with a multipocket electron
beam evaporation system. The system is mated to a customer supplied
robot and FOUP that can handle 25 wafers at a time.
System Specifications
Maximum substrate size
One 12 inch (300 mm) or smaller diameter substrates. Multiple small
substrates can be accommodated on substrate holders. Custom substrate
configurations are available on request.
Maximum substrate temperature
900° C (in oxygen) for non-transparent substrates such as Silicon, and
800° C for transparent substrates (such as sapphire). No thermal paste or
bonding required.
Temperature uniformity
±8° C across 12 inch diameter substrate
Operating Pressure Range
5 x 10-7 Torr base to 100 mTorr
Target Size
Three 6-inch diameter targets (maximum diameter)
Film Thickness Uniformity
±5% over 90% of 12" diameter substrate
Target to Substrate (Throw) Distance
System designed for 6-inch (~200 mm) throw. Throw is variable from 7.5
inches (minimum) to 9 inches maximum (effects maximum temperature,
thickness and composition specifications)
Raster path length
5 inches
Nominal Angle of Incidence
of the laser beam on target: 60°
Base Pressure of the Main Chamber
P < 5 x 10-7 Torr guaranteed, with system at room temperature without
targets. Pressure below 5 x 10-8 Torr with optional loadlock.
Vacuum Chamber
Box style chamber with easy substrate / target changes.
Operational Wavelength
248 nm (KrF). Other wavelengths available on request.
Please contact us for site prep information.